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J Neurophysiol 97: 3015-3023, 2007. First published February 21, 2007; doi:10.1152/jn.01242.2006
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Gating Information by Two-State Membrane Potential Fluctuations

A. Kepecs1 and S. Raghavachari2

1Cold Spring Harbor Laboratory, Cold Spring Harbor, New York; and 2Department of Neurobiology, Duke University Medical Center, Durham, North Carolina

Submitted 27 November 2006; accepted in final form 5 February 2007

Two-state voltage fluctuations between a hyperpolarized down-state and a depolarized up-state have been observed experimentally in a wide variety of neurons across brain regions. Using a biophysical model, we show that synaptic input by NMDA receptors can cause such membrane potential fluctuations. In this model, when a neuron is driven by two input pathways with different AMPA/NMDA receptor content, the NMDA-rich input causes up-state transitions, whereas the AMPA-rich input generates spikes only in the up-state. Therefore the NMDA-rich pathway can gate input from an AMPA pathway in an all-or-none fashion by switching between different membrane potential states. Furthermore, once in the up-state, the NMDA-rich pathway multiplicatively increases the gain of a neuron responding to AMPA-rich input. This proposed mechanism for two-state fluctuations directly suggests specific computations, such as gating and gain modulation based on the distinct receptor composition of different neuronal pathways. The dynamic gating of input by up- and down-states may be an elementary operation for the selective routing of signals in neural circuits, which may explain the ubiquity of two-state fluctuations across brain regions.


Address for reprint requests and other correspondence: A. Kepecs, Cold Spring Harbor Laboratory, 1 Bungtown Road, Cold Spring Harbor, NY 11724 (E-mail: kepecs{at}cshl.edu). S. Raghavachari (E-mail: raghavachari{at}neuro.duke.edu)




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