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J Neurophysiol (February 21, 2007). doi:10.1152/jn.01242.2006
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Submitted on November 27, 2006
Accepted on February 5, 2007

Gating information by two-state membrane potential fluctuations

Adam Kepecs1* and Sridhar Raghavachari2

1 Cold Spring Harbor Laboratory, Cold Spring Harbor, New York, United States
2 Neurobiology, Duke University, Durham, North Carolina, United States

* To whom correspondence should be addressed. E-mail: kepecs{at}cshl.edu.

Two-state voltage fluctuations between a hyperpolarized down-state and a depolarized up-state have been observed experimentally in a wide variety of neurons across brain regions. Using a biophysical model, we show that synaptic input via NMDA receptors can cause such membrane potential fluctuations. In this model, when a neuron is driven by two input pathways with different AMPA/NMDA receptor content, the NMDA-rich input causes up-state transitions, while the AMPA-rich input generates spikes only in the up-state. Therefore the NMDA-rich pathway can gate input from an AMPA pathway in an all-or-none fashion by switching between different membrane potential states. Furthermore, once in the up-state, the NMDA-rich pathway multiplicatively increases the gain of a neuron responding to AMPA-rich input. This proposed mechanism for two-state fluctuations directly suggests specific computations, such as gating and gain modulation based on the distinct receptor composition of different neuronal pathways. The dynamic gating of input by up and down-states may be an elementary operation for the selective routing of signals in neural circuits, which may explain the ubiquity of two-state fluctions across brain regions.




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